Photocarrier radiometry of ion implanted semiconductors

Abstract
The dependence of the photocarrier radiometric (PCR) signal on ion implant dose in Si is reported. The results show almost entirely monotonic behavior over a large range of industrially relevant fluences (1x10¹⁰ to 1x10¹⁶ cm^-2) for B⁺, As⁺, P⁺, and BF2⁺ implanted in Si wafers at various energies. In addition, increasing the absorption coefficient of the excitation source is shown to improve the sensitivity of the PCR amplitude to dose. A three-dimensional three-layer model is used to provide a quantitative understanding of the PCR response of ion-implanted semiconductors. Good agreement between theoretically calculated PCR signal dependence on dose and experimental results is obtained.