| Issue |
J. Phys. IV France
Volume 03, Number C3, Août 1993
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
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|
|---|---|---|
| Page(s) | C3-43 - C3-49 | |
| DOI | https://doi.org/10.1051/jp4:1993305 | |
Proceedings of the Ninth European Conference on Chemical Vapour Deposition
J. Phys. IV France 03 (1993) C3-43-C3-49
DOI: 10.1051/jp4:1993305
1 National Research Council Resident Research Associate. Present address : LTPCM-ENSEEG, Domaine Universitaire, BP. 75, 38402 Saint-Martin d'Hères cedex, France
2 NASA Lewis Research Center, 21000 Brookpark Rd, Cleveland OH 44135, U.S.A.
© EDP Sciences 1993
J. Phys. IV France 03 (1993) C3-43-C3-49
DOI: 10.1051/jp4:1993305
Tractable chemical models for CVD of silicon and carbon
E. BLANQUET1 and S.A. GOKOGLU21 National Research Council Resident Research Associate. Present address : LTPCM-ENSEEG, Domaine Universitaire, BP. 75, 38402 Saint-Martin d'Hères cedex, France
2 NASA Lewis Research Center, 21000 Brookpark Rd, Cleveland OH 44135, U.S.A.
Abstract
Tractable chemical models are validated for the CVD of silicon and carbon. Dilute silane (SiH4) and methane (CH4) in hydrogen are chosen as gaseous precursors. The chemical mechanism for each systems Si and C is deliberately reduced to three reactions in the models : one in the gas phase and two at the surface. The axial-flow CVD reactor utilized in this study has well-characterized flow and thermal fields and provides variable deposition rates in the axial direction. Comparisons between the experimental and calculated deposition rates are made at different pressures and temperatures.
© EDP Sciences 1993