| Numéro |
J. Phys. IV France
Volume 131, December 2005
|
|
|---|---|---|
| Page(s) | 223 - 224 | |
| DOI | https://doi.org/10.1051/jp4:2005131055 | |
| Publié en ligne | 18 janvier 2006 | |
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 223-224
DOI: 10.1051/jp4:2005131055
Kavli Institute of Nanoscience Delft, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
© EDP Sciences 2005
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 223-224
DOI: 10.1051/jp4:2005131055
Gate effect in charge-density wave nanowires
E. Slot, M.A. Holst and H.S.J. van der ZantKavli Institute of Nanoscience Delft, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
Abstract
We have investigated
transport characteristics of charge-density wave nanowires with a few hundred parallel
chains. At temperatures below 50 K, these samples show power-law behavior in temperature
and voltage, characteristic for one-dimensional transport. In this regime, gate dependent
transport has been observed.
© EDP Sciences 2005