| Numéro |
J. Phys. IV France
Volume 131, December 2005
|
|
|---|---|---|
| Page(s) | 225 - 226 | |
| DOI | https://doi.org/10.1051/jp4:2005131056 | |
| Publié en ligne | 18 janvier 2006 | |
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 225-226
DOI: 10.1051/jp4:2005131056
1 Laboratoire de Photonique et de Nanostructures, CNRS, route de Nozay, 91460 Marcoussis, France
2 Centre de Recherches sur les Très Basses Températures-CNRS, Grenoble, France
© EDP Sciences 2005
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 225-226
DOI: 10.1051/jp4:2005131056
Charge density waves modulation in different chains of NbSe3
C. Brun1, Z.Z. Wang1 and P. Monceau21 Laboratoire de Photonique et de Nanostructures, CNRS, route de Nozay, 91460 Marcoussis, France
2 Centre de Recherches sur les Très Basses Températures-CNRS, Grenoble, France
Abstract
Using low temperature (LT) scanning tunnelling microscopy (STM) under ultra-high vacuum
(UHV), we studied charge density waves (CDW) modulations in different chains of
NbSe3 at 5 K and 78 K. Both the underlying molecular lattice and two (one) CDW
superlattice (s) were observed simultaneously at 5 K (78 K) with atomic resolution.
Three types of chains were present in topographical constant current images showing
different bias voltage dependence. Different from the early STM observation, at 5 K, the
modulation of LT-CDW in chain I is found to be 2-3 times more important than that in
chain II.
© EDP Sciences 2005