J. Phys. IV France
Volume 131, December 2005
Page(s) 223 - 224
Published online 18 January 2006
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 223-224

DOI: 10.1051/jp4:2005131055

Gate effect in charge-density wave nanowires

E. Slot, M.A. Holst and H.S.J. van der Zant

Kavli Institute of Nanoscience Delft, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands

We have investigated transport characteristics of charge-density wave nanowires with a few hundred parallel chains. At temperatures below 50 K, these samples show power-law behavior in temperature and voltage, characteristic for one-dimensional transport. In this regime, gate dependent transport has been observed.

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