Numéro |
J. Phys. IV France
Volume 131, December 2005
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Page(s) | 139 - 142 | |
DOI | https://doi.org/10.1051/jp4:2005131033 | |
Publié en ligne | 18 janvier 2006 |
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 139-142
DOI: 10.1051/jp4:2005131033
Transverse correlations and plasticity in the CDW conductor NbSe3 studied by X-ray microbeam diffraction
A.F. Isakovic1, P.G. Evans2, Z. Cai3, B. Lai3, J. Kmetko1, K. Cicak1 and R.E. Thorne11 LASSP, Cornell University, Ithaca, NY, USA
2 Mat. Sci. and Engineering Dept., University of Wisconsin-Madison, USA
3 Argonne National Lab, Argonne, IL, USA
Abstract
In whisker-like samples of the quasi-1D conductor NbSe3, the presence of
longitudinal steps causes shearing of the CDW, and leads to a loss of transverse
correlations. We use a microdiffraction setup with a spatial resolution of 300 nm and an
angular sensitivity of 5 mdeg to image the resulting CDW contrast between thick and thin
portions of the sample. Microdiffraction in the b* - c* plane shows
that depinning on the thick, weakly pinned side is accompanied by the loss of diffraction
intensity, demonstrating a loss of correlations in qualitative agreement with previous
X-ray diffraction topography measurements1, but with an order-of-magnitude
improvement in spatial resolution. Microdiffraction images in the a* -
b* plane reveal a sharp increase in the full width at half maximum in an approximately
1 micron thick region near the step edge and a rotation of the CDW wavevector that varies
with applied field. We use the extremal value of the CDW wavevector rotation to estimate
the shear modulus of this electronic crystal.
© EDP Sciences 2005