Numéro
J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic Crystals
ECRYS-99
Page(s) Pr10-151 - Pr10-152
DOI https://doi.org/10.1051/jp4:19991038
International Workshop on Electronic Crystals
ECRYS-99

J. Phys. IV France 09 (1999) Pr10-151-Pr10-152

DOI: 10.1051/jp4:19991038

Imaging field-dependent structure in charge-density waves by X-ray diffraction topography

Y. Li1, S.G. Lemay2, J.H. Price1, K. Cicak2, K. O'Neill2, K. Ringland2, K.D. Finkelstein3, J.D. Brock1 and R.E. Thorne2

1  School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, U.S.A.
2  Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, U.S.A.
3  Cornell High-Energy Synchrotron Source (CHESS), Ithaca, NY 14853, U.S.A.


Abstract
We have imaged field-dependent CDW structure in NbSe3 single crystals by X-ray diffraction topography. Just above ET, the CDW shears along longitudinal steps in crystal thickness associated with small-angle grain boundaries, and at high fields transverse correlations recover. These results demonstrate X-ray topography as an effective probe of CDW structure, and together with earlier transport measurements establish that extrinsic sources dominate the most obvious manifestations of plasticity in this CDW conductor.



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