Ferroelectric (Na$_{1/2}$Bi$_{1/2}$)TiO$_{3}$-BaTiO$_{3}$ thin films obtained by pulsed laser deposition

M. Dinescu; F. Craciun; N. Scarisoreanu; P. Verardi; A. Moldovan; A. Purice; A. Sanson; C. Galassi

doi:doi:10.1051/jp4:2005128012

Numéro		J. Phys. IV France Volume 128, September 2005


Page(s)		77 - 80
DOI		https://doi.org/10.1051/jp4:2005128012

J. Phys. IV France 128 (2005) 77-80
DOI: 10.1051/jp4:2005128012

Ferroelectric (Na_1/2Bi_1/2)TiO₃-BaTiO₃ thin films obtained by pulsed laser deposition

M. Dinescu¹, F. Craciun², N. Scarisoreanu¹, P. Verardi³, A. Moldovan¹, A. Purice¹, A. Sanson⁴ and C. Galassi⁴

¹ NILPRP Bucharest, PO Box MG-16, 77125, Romania
² CNR Istituto dei Sistemi Complessi, Via del Fosso del Cavaliere 100, 00133 Rome, Italy
³ CNR-Istituto di Acustica, Via del Fosso del Cavaliere 100, 00133 Rome, Italy
⁴ CNR-ISTEC, Via Granarolo 64, 48018 Faenza, Italy

Abstract
The solid solution of the ferroelectric relaxor (Na_1/2Bi_1/2)TiO₃ with BaTiO₃, (1-x) NBT-x BT (NBT-BT) shows a morphotropic phase boundary with enhanced properties at x = 0.06-0.07. We have prepared targets of (1-x) NBT-x BT with x = 0.06 by solid state reaction and sintering at 1200 $^{\circ}$ C, up to a final relative density of 97.8%. Films from these targets have been deposited on MgO substrates by pulsed laser deposition, in different substrate temperature and heating rate conditions. First results obtained from structural, AFM and electrical characterization are reported. The obtained films are polycrystalline perovskite with a slight (100) orientation. High relative dielectric constant, of about 1300, have been obtained.

Ferroelectric (Na1/2Bi1/2)TiO3-BaTiO3 thin films obtained by pulsed laser deposition

Ferroelectric (Na_1/2Bi_1/2)TiO₃-BaTiO₃ thin films obtained by pulsed laser deposition