| Numéro |
J. Phys. IV France
Volume 06, Numéro C5, Septembre 1996
International Field Emission SocietyIFES'96 Proceedings of the 43rd International Field Emission Symposium |
|
|---|---|---|
| Page(s) | C5-91 - C5-95 | |
| DOI | https://doi.org/10.1051/jp4:1996514 | |
International Field Emission Society
IFES'96
Proceedings of the 43rd International Field Emission Symposium
J. Phys. IV France 06 (1996) C5-91-C5-95
DOI: 10.1051/jp4:1996514
1 Myong Ji University, Department of Physics, Yongin Kyunggi-Do, Seoul 449-728, Korea
2 Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
3 Korea Telecom Research Laboratories, 17 Woomyeon-Dong Seocho-Ku, Seoul 137-792, Korea
© EDP Sciences 1996
IFES'96
Proceedings of the 43rd International Field Emission Symposium
J. Phys. IV France 06 (1996) C5-91-C5-95
DOI: 10.1051/jp4:1996514
Field Emission from Pure and Nitrogen-Incorporated Diamond-Like-Carbon Films
S. Lee1, B. Chung1, T.-Y. Ko1, H. Cho1, D. Jeon1, K.-R. Lee2 and C.E. Yun31 Myong Ji University, Department of Physics, Yongin Kyunggi-Do, Seoul 449-728, Korea
2 Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
3 Korea Telecom Research Laboratories, 17 Woomyeon-Dong Seocho-Ku, Seoul 137-792, Korea
Abstract
Field emission from diamond-like-carbon (DLC) films grown on a silicon substrate has been investigated. The films were prepared using radio-frequency plasma-assisted chemical vapor deposition. A DLC film incorporated with nitrogen exhibited better emission characteristics. For both nitrogen-incorporated and pure DLC, electric arc between the film and anode drastically enhanced the emission current. Analysis showed that the arc induced the formation of silicon carbide and the change in the surface morphology. The possible mechanism of the enhanced emission is discussed.
© EDP Sciences 1996