Peculiarities of Field Electron Emission from CVD Diamond Films

A.V. Karabutov; V.I. Konov; S.M. Pimenov; V.D. Frolov; E.D. Obraztsova; V.I. Polyakov; N.M. Rossukanyi

doi:doi:10.1051/jp4:1996518

Numéro		J. Phys. IV France Volume 06, Numéro C5, Septembre 1996 International Field Emission Society IFES'96 Proceedings of the 43^rd International Field Emission Symposium


Page(s)		C5-113 - C5-118
DOI		https://doi.org/10.1051/jp4:1996518

International Field Emission Society
IFES'96
Proceedings of the 43^rd International Field Emission Symposium

J. Phys. IV France 06 (1996) C5-113-C5-118
DOI: 10.1051/jp4:1996518

Peculiarities of Field Electron Emission from CVD Diamond Films

A.V. Karabutov¹, V.I. Konov¹, S.M. Pimenov¹, V.D. Frolov¹, E.D. Obraztsova¹, V.I. Polyakov² and N.M. Rossukanyi²

¹ General Physics Institute, Vavilova str. 38, Moscow 117942, Russia
² Institute of Radio Engineering and Electronics, Mohovaya str. 11, Moscow 103907, Russia

Abstract
Results are reported on characterization of the field electron emission from diamond films grown by dc arc discharge plasma CVD onto Si substrates from CH₄-H₂ gas mixtures. The field electron emission was observed at 15-20 V/µm. Emission current-voltage dependences were studied for films prepared at different CVD conditions and post-growth surface treatment/ modification (ultrathin metal and metal oxide coatings, MW-plasma processing, laser-induced surface graphitization). Features of emission current versus applied field behaviour (including a hysteresis phenomenon, vacuum arc initiation) and ultralow (0.1-0.5 eV) values of effective work function derived from Fowler-Nordheim plot fitting are discussed. A high vacuum scanning tunneling-field emission microscope was applied for simultaneous mapping of field electron emission inten-sity, topography and work function to study electronic and structural properties of field emission centers.