Numéro
J. Phys. IV France
Volume 04, Numéro C7, Juillet 1994
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
Page(s) C7-207 - C7-210
DOI https://doi.org/10.1051/jp4:1994750
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique

J. Phys. IV France 04 (1994) C7-207-C7-210

DOI: 10.1051/jp4:1994750

On the use of the modulated reflectance microscopy in the study of laser diode facets : detection of surface defects

A.M. Mansanares1, J. P. Roger2, D. Fournier2 and A.C. Boccara2

1  Instituto de Física, Universidade Estadual de Campinas, Cx. P. 6165, 13083-970 Campinas (SP), Brazil
2  Laboratoire d'Optique Physique, ESPCI, UPR A0005 du CNRS, Laboratoire d'Instrumentation, UPMC, UPR A0005 du CNRS, 10 rue Vauquelin, 75005 Paris, France


Abstract
InGaAsP/InP buried heterostructure lasers were investigated using reflectance microscopy. Measurements were performed for both biased (current modulation) and non-biased (modulated pump beam) device. Maps of the facets of non-degraded and degraded lasers are presented and discussed.



© EDP Sciences 1994