| Numéro |
J. Phys. IV France
Volume 04, Numéro C7, Juillet 1994
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique |
|
|---|---|---|
| Page(s) | C7-211 - C7-214 | |
| DOI | https://doi.org/10.1051/jp4:1994751 | |
8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-211-C7-214
DOI: 10.1051/jp4:1994751
1 Dipartimento di Energetica, Università di Roma "La Sapienza", Via Scarpa 16, 00161 Roma, Italy
2 Technical University of Moldova, Stephan Cel Mare 168, 277012 Kishinev, Moldova
3 Department of Physics, Peking University, Beijing 100871, China
© EDP Sciences 1994
8 ITMP3 / 8éme conférence internationale de photoacoustique et photothermique
J. Phys. IV France 04 (1994) C7-211-C7-214
DOI: 10.1051/jp4:1994751
On mirror temperature of a semiconductor diode laser studied with a photothermal deflection method
M. Bertolotti1, G. Liakhou2, R. Li Voti1, R.P. Wang3, C. Sibilia1, A.V. Syrbu2 and V.P. Yakovlev21 Dipartimento di Energetica, Università di Roma "La Sapienza", Via Scarpa 16, 00161 Roma, Italy
2 Technical University of Moldova, Stephan Cel Mare 168, 277012 Kishinev, Moldova
3 Department of Physics, Peking University, Beijing 100871, China
Abstract
The mirror temperature response of a diode laser to injection current is studied through the photodeflection method. A theoretical model is presented together with some experimental measurements for a AlGaAs quantum well laser diode.
© EDP Sciences 1994