| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-83 - C6-88 | |
| DOI | https://doi.org/10.1051/jp4:1991615 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-83-C6-88
DOI: 10.1051/jp4:1991615
Institute of Electron Technology, Janiszewsiego 11/17, PL-50-372 Wroclaw, Poland
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-83-C6-88
DOI: 10.1051/jp4:1991615
ADVANTAGES OF ac-EBIC IN DETERMINING THE SEMICONDUCTOR PARAMETERS
A. ROMANOWSKIInstitute of Electron Technology, Janiszewsiego 11/17, PL-50-372 Wroclaw, Poland
Abstract
The influence of trapping centres on the phase shift of the short circuit current generated by point source is analyzed. It is shown that maximum value of the phase corresponds to emission coefficient. Minority trapping centres of the Cu implanted n+p shallow junction are measured by ac-LBIC and ac-EBIC.
© EDP Sciences 1991