J. Phys. IV France
Volume 132, March 2006
Page(s) 285 - 289
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 285-289

DOI: 10.1051/jp4:2006132054

Formation of epitaxial strontium oxide and silicate on silicon (001)

G. Delhaye1, M. El Kazzi1, S. Gaillard1, 2, M. Gendry1 and G. Hollinger1

1  LEOM (UMR CNRS 5512), École Centrale de Lyon, 69134 Ecully Cedex, France
2  ST Microelectronics, 38926 Crolles Cedex, France

Molecular Beam Epitaxy was used to grow thin epitaxial SrO layers on Si(001). Such thin layers might act as a good template for the integration of epitaxial functional oxides with Si. Conditions for achieving well controlled interfacial properties were investigated as a function of growth temperature. Our results have shown that the growth of an epitaxial SrO film of good crystalline quality and the formation of a sharp interface were possible at low growth temperature. The behavior was quite different for a growth at high temperature where the formation of a silicate was observed.

© EDP Sciences 2006