10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 35-39
DOI: 10.1051/jp4:2006132008

Structural and photoemission studies of SrF₂ adsorption on Si(001)

L. Pasquali¹, S.M. Suturin², A. Balanev², A.K. Kaveev², N.S. Sokolov², B.P. Doyle³, F. Borgatti³, A. Giglia³, N. Mahne³, M. Pedio³ and S. Nannarone<sup>1, 3

1</sup>  Department of Materials Engineering and INFM, University of Modena and Reggio Emilia, via Vignolese 905, 41100 Modena, Italy
²  Ioffe Physical-Technical Institute, RAS, Solid State Optics Department, Polytechnicheskaya Str., Saint Petersburg 194021, Russia
³  INFM-CNR, TASC Laboratory, Area Science Park, 34012 Trieste, Italy

Abstract
The growth modes of SrF₂ on Si(001) are investigated by AFM and ultraviolet photoemission. Two growth regimes are identified according to the substrate temperature during deposition, resulting in flat and ordered fluoride layers or in nano-patterned films with characteristic triangular islands. The flat layer growth obtained at high temperature is accompanied by molecular dissociation at the interface.

© EDP Sciences 2006