C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 205-209
Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystemsC. Pelosi1, M. Bosi1, G. Attolini1 and T. Prutskij2
1 IMEM-CNR Parco Area delle Scienze 37/A, 43010 Fontanini, Parma, Italy
2 Instituto de Ciencias, BUAP, Apdo postal 207, 7200, Puebla, Pue., Mexico
The issue regarding the interfaces between arsenide and phosphide in III-V semiconductor is particularly relevant for Vapour Phase Epitaxy (VPE) and Metallo-Organic Vapour Phase Epitaxy (MOVPE) techniques; an irreproducibility in preparing abrupt interfaces between arsenide and phosphide has been evidenced by several authors and is often imputed to the volatility of arsenic and phosphorus species: Many different growth procedures have been suggested in order to obtain sharp transition between the two different materials.
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