| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 177 - 183 | |
| DOI | https://doi.org/10.1051/jp4:2006132034 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 177-183
DOI: 10.1051/jp4:2006132034
1 Institute of Thin Films and Interfaces, Center of Nanoelectronic Systems for Information Technology (CNI), Research Center Juelich, 52425 Juelich, Germany
2 LayTec GmbH, Helmholtzstr. 13-14, 10587 Berlin, Germany
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 177-183
DOI: 10.1051/jp4:2006132034
Observation of growth during the MOVPE of III-nitrides
H. Hardtdegen1, N. Kaluza1, R. Steins1, Y.S. Cho1, R. Schmidt1, Z. Sofer1 and J.-T. Zettler21 Institute of Thin Films and Interfaces, Center of Nanoelectronic Systems for Information Technology (CNI), Research Center Juelich, 52425 Juelich, Germany
2 LayTec GmbH, Helmholtzstr. 13-14, 10587 Berlin, Germany
Abstract
This paper reports on how the observation of the morphology
development and growth by in situ optical methods as well as the
determination of substrate temperature can be employed to tailor the
characteristics of GaN and to control growth in MOVPE (metalorganic
vapor phase epitaxy). Furthermore for the first time a method will
be demonstrated that allows the difficult determination of an alloy
composition - here (Al
Ga
)N - independent on
the perfection and roughness of the developing layer.
© EDP Sciences 2006