J. Phys. IV France
Volume 132, March 2006
Page(s) 177 - 183
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 177-183

DOI: 10.1051/jp4:2006132034

Observation of growth during the MOVPE of III-nitrides

H. Hardtdegen1, N. Kaluza1, R. Steins1, Y.S. Cho1, R. Schmidt1, Z. Sofer1 and J.-T. Zettler2

1  Institute of Thin Films and Interfaces, Center of Nanoelectronic Systems for Information Technology (CNI), Research Center Juelich, 52425 Juelich, Germany
2  LayTec GmbH, Helmholtzstr. 13-14, 10587 Berlin, Germany

This paper reports on how the observation of the morphology development and growth by in situ optical methods as well as the determination of substrate temperature can be employed to tailor the characteristics of GaN and to control growth in MOVPE (metalorganic vapor phase epitaxy). Furthermore for the first time a method will be demonstrated that allows the difficult determination of an alloy composition - here (Al$_{\rm x}$Ga $_{\rm 1-x}$)N - independent on the perfection and roughness of the developing layer.

© EDP Sciences 2006