J. Phys. IV France
Volume 132, March 2006
Page(s) 171 - 175
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 171-175

DOI: 10.1051/jp4:2006132033

IV characteristics in structures prepared by tip induced oxidation

V. Cambel, J. Soltýs, J. Martaus and M. Mosko

Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia

We have studied transport of a two-dimensional electron gas through an energy barrier prepared by local anodic oxidation with an AFM tip. Experimental IV curves are first explained by a simple model in which the built-in potential is of tapered shape. Then we use computer simulations, ensemble Monte Carlo method with molecular dynamics included, to explain the details of the 2D electron transport in the system. The simulations show the influence of the carrier concentration, applied voltage, and barrier width, on the effective barrier height. We show that few ionized donors can influence the 2D electron transport in the system significantly. In a similar way the confinement of 2D electrons in nanometer-sized devices (quantum dots, wires, single-electron transistors) can be reduced?.

© EDP Sciences 2006