J. Phys. IV France
Volume 132, March 2006
Page(s) 117 - 120
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 117-120

DOI: 10.1051/jp4:2006132023

In situ formation of a new Al-Pd-Mn-Si quasicrystalline phase on the pentagonal surface of the Al-Pd-Mn quasicrystal

J.-N. Longchamp, M. Erbudak and Y. Weisskopf

Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich, Switzerland

Growth of thin Si films deposited on the 5-fold symmetry surface of the icosahedral Al-Pd-Mn quasicrystal is monitored by low-energy electron diffraction, secondary-electron imaging, and Auger electron spectroscopy. We observe that below a sample temperature of 370 K, Si grows in an amorphous structure. Above 370 K, a new Al-Pd-Mn-Si quasicrystalline phase, which exhibits the same icosahedral symmetry as the substrate, is formed at the surface by substitutionally replacing Al by absorbed Si.

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