J. Phys. IV France
Volume 132, March 2006
Page(s) 105 - 110
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 105-110

DOI: 10.1051/jp4:2006132021

Electronic properties of intrinsic and heavily doped AlN and GaN

A. Ferreira da Silva1 and C. Persson2

1  Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, BA, Brazil
2  Department of Materials Science and Engineering, Royal Institute of Technology, 100 44 Stockholm, Sweden

We present a theoretical study of the electronic structure, optical properties, and the effective masses of AlN and GaN based on the local density approximation (LDA) within the density functional theory (DFT), employing the first-principles, full-potential linearized augmented plane wave method. We also describe the effects on the electronic properties of the semiconductors due to heavily n- and p-type doping. The critical concentration Nc for the doping-induced metal-nonmetal (MNM) transition in both n- and p-type is calculated.

© EDP Sciences 2006