| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 105 - 110 | |
| DOI | https://doi.org/10.1051/jp4:2006132021 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 105-110
DOI: 10.1051/jp4:2006132021
1 Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, BA, Brazil
2 Department of Materials Science and Engineering, Royal Institute of Technology, 100 44 Stockholm, Sweden
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 105-110
DOI: 10.1051/jp4:2006132021
Electronic properties of intrinsic and heavily doped AlN and GaN
A. Ferreira da Silva1 and C. Persson21 Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, BA, Brazil
2 Department of Materials Science and Engineering, Royal Institute of Technology, 100 44 Stockholm, Sweden
Abstract
We present a theoretical study of the electronic structure, optical
properties, and the effective masses of AlN and GaN based on the
local density approximation (LDA) within the density functional
theory (DFT), employing the first-principles, full-potential
linearized augmented plane wave method. We also describe the effects
on the electronic properties of the semiconductors due to heavily
n- and p-type doping. The critical concentration Nc for the
doping-induced metal-nonmetal (MNM) transition in both n- and
p-type is calculated.
© EDP Sciences 2006