J. Phys. IV France
Volume 132, March 2006
Page(s) 41 - 47
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 41-47

DOI: 10.1051/jp4:2006132009

Electrical barriers at semiconductor interfaces: Some reflections and future challenges

R.H. Williams, K.S. Teng and S.P. Wilks

Multidisciplinary Nanotechnology Centre, School of Engineering, Swansea University, Swansea SA2 8PP, UK

Interfaces between semiconductors and insulators, metals or other semiconductors play a crucial role in the behaviour of solid state electronic devices. It is therefore no surprise that techniques to accurately control the electronic properties of such interfaces has long been an ambitious goal. Here we consider some of the key contributions to this area over several decades, concentrating in particular on the role of dipole layers at semiconductor interfaces. We consider the current state of our understanding with respect to the fabrication of microelectronic and optical devices. Furthermore, we present views on some of the future challenges particularly in high performance optical devices and nanostructures.

© EDP Sciences 2006