J. Phys. IV France
Volume 131, December 2005
Page(s) 207 - 211
Publié en ligne 18 janvier 2006
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 207-211

DOI: 10.1051/jp4:2005131051

A new relaxation state of negative resistance in nano-fabricated CDW of K0.3MoO3

K. Morikawa, A. Goto, N. Shinjo, Y. Nishi, A. Fujii, A. Nakada and  H. Kubota

Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan

New non-linear conduction states that are related to the negative resistance phenomena in the nano-fabricated K0.3MoO3 are discussed. The conduction states are dramatically shown by the magnitude of one-dimensionality. The reason of the negative resistance was considered and related to the decrease of the effective mass of CDW and reduction of weak-pinning effects of CDW due to nano-fabrication in the form report. The negative resistance is described by using the phase diagram of internal field-current characters.

© EDP Sciences 2005