J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 3 - 10

J. Phys. IV France
12 (2002) Pr3-3
DOI: 10.1051/jp420020026

SiGe Hetero FETs on silicon at cryogenic temperature

F. Aniel1, M. Enciso-Aguilar1, N. Zerounian1, L. Giguerre1, P. Crozat1, R. Adde1, M. Zeuner2, G. Höck2, T. Hackbarth2, H.-J. Herzog1 and U. König2

1  Institut d'Électronique Fondamentale, Université Paris-Sud, 91405 Orsay, France
2  Daimler Chrysler Research Center, Wilhelm-Runge-Str. 11, 89081 Ulm, Germany

Better transport properties and band gap engineering give a growing importance to SiGe alloy technologies in microelectronics. Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on RF and low noise.

© EDP Sciences 2002