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J. Phys. IV France Vol. 12 No. 3

Journal de Physique IV (Proceedings)

Vol. 12 No. 3 (May 2002)

5th European Workshop on Low temperature Electronics
Grenoble, France, June 19-21, 2002

F. Balestra

ISBN 2-86883-606-2



  • Foreword     p. III
    F. Balestra
    Abstract 


  • SiGe Hetero FETs on silicon at cryogenic temperature     p. 3
    F. Aniel, M. Enciso-Aguilar, N. Zerounian, L. Giguerre, P. Crozat, R. Adde, M. Zeuner, G. Höck, T. Hackbarth, H.-J. Herzog and U. König
    Abstract | PDF file (619 KB)


  • The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperatures     p. 11
    F. Dieudonné, J. Jomaah, C. Raynaud and F. Balestra
    Abstract | PDF file (263 KB)


  • Degradation of hard MOS devices at low temperature     p. 15
    N.T. Fourches
    Abstract | PDF file (257 KB)


  • Temperature scaling of nanoscale silicon MOSFETs     p. 19
    V. Sverdlov, Y. Naveh and K.K. Likharev
    Abstract | PDF file (189 KB)


  • Low temperature operation of graded-channel SOI nMOSFETs for analog applications     p. 23
    M.A. Pavanello, P.G. Der Agopian1, J.A. Martino and D. Flandre
    Abstract | PDF file (196 KB)


  • New silicon devices beyond CMOS     p. 27
    E. Suzuki, K. Ishii and T. Sekigawa
    Abstract | PDF file (199 KB)


  • Low temperature operation of 0.13  $\mu$m Partially-Depleted SOI nMOSFETs with floating body     p. 31
    M.A. Pavanello, J.A. Martino, A. Mercha, J.M. Rafi, E. Simoen, C. Claeys, H. van Meer and K. De Meyer
    Abstract | PDF file (221 KB)


  • Low frequency noise versus temperature spectroscopy of Ge JFETs, Si JFETs and Si MOSFETs     p. 37
    D.V. Camin, C.F. Colombo and V. Grassi
    Abstract | PDF file (391 KB)


  • Cryogenic operation of sub-30 nm nMOSFETs: Impact of device architecture     p. 45
    G. Bertrand, S. Deleonibus, D. Souil, B. Previtali, C. Caillat, G. Guégan, M. Sanquer and F. Balestra
    Abstract | PDF file (275 KB)


  • MOSFET modeling and parameter extraction for low temperature analog circuit design     p. 51
    P. Martin, M. Bucher and C. Enz
    Abstract | PDF file (350 KB)


  • Low temperature operation of ultra-thin gate oxide sub-0.1  $\mu$m MOSFETs     p. 57
    B. Cretu, F. Balestra, G. Ghibaudo and G. Guégan
    Abstract | PDF file (195 KB)


  • Parasitic conduction in a 0.13  $\mu$m CMOS technology at low temperature     p. 61
    A. Mercha, J.M. Rafi, E. Simoen, E. Augendre and C. Claeys
    Abstract | PDF file (189 KB)


  • Ge semiconductor devices for cryogenic power electronics - II     p. 67
    R.R. Ward, W.J. Dawson, R.K. Kirschman, O. Mueller, R.L. Patterson, J.E. Dickman and A. Hammoud
    Abstract | PDF file (263 KB)


  • Temperature dependence of generation-recombination noise in p-n junctions     p. 71
    J.A. Jiménez Tejada, A. Godoy, A. Palma and P. Cartujo
    Abstract | PDF file (242 KB)


  • Forming PbTe on Si-substrates for IR sensors     p. 75
    V.I. Rudakov and I.M. Smirnov
    Abstract | PDF file (243 KB)


  • Semiconductor microcrystals with ultra-high sensitivity to mechanical strain at cryogenic temperatures     p. 79
    A. Druzhinin, E. Lavitska, I. Maryamova, T. Palewski and A. Kutrakov
    Abstract | PDF file (257 KB)


  • Si nano-devices using an electron-hole system     p. 85
    A. Fujiwara and Y. Takahashi
    Abstract | PDF file (754 KB)


  • Mesoscopic transport characteristics of nano-scale SOI MOSFETs: Coulomb blockade and localization     p. 93
    Y. Omura and M. Yamamoto
    Abstract | PDF file (245 KB)


  • Electron transport in silicon nanostructures based on ultra-thin SOI     p. 97
    A. Pouydebasque, L. Montes, J. Zimmermann, F. Balestra, D. Fraboulet, D. Mariolle, J. Gautier, F. Schopfer, V. Bouchiat and L. Saminadayar
    Abstract | PDF file (292 KB)


  • Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO2 films     p. 103
    K. Komiya, Y. Omura, T. Oka and M. Nagahara
    Abstract | PDF file (227 KB)


  • Random telegraph noise in ultimate MOSFETs at very low temperature in the subthreshold regime     p. 107
    X. Jehl, M. Sanquer, G. Bertrand, G. Guégan and S. Deleonibus1
    Abstract | PDF file (271 KB)


  • A relationship between 1/f noise and DC parameters in the pHEMT at 4.2 K     p. 113
    T. Lucas and Y. Jin
    Abstract | PDF file (206 KB)


  • DC and 1/f noise characterization of cryogenically cooled pseudomorphic HEMT's     p. 117
    G. Ferrante, F. Principato, A. Caddemi, N. Donato and G. Tuccari
    Abstract | PDF file (267 KB)


  • Investigations on the low-power and low-frequency noise performance of pHEMT at 4.2 K     p. 121
    T. Lucas and Y. Jin
    Abstract | PDF file (225 KB)


  • Cryogenic detector systems for materials analysis     p. 127
    J. Höhne, M. Bühler, F.V. Feilitzsch, J. Jochum, T. Hertrich, C. Hollerith, M. Huber, J. Nicolosi, K. Phelan, D. Redfern, B. Simmnacher, R. Weiland and D. Wernicke
    Abstract | PDF file (146 KB)


  • New developments in textured and epitaxial NbN superconducting layers for ultimate sensors and RSFQ digital circuits     p. 129
    J.-C. Villégier, N. Hadacek, C. Jorel, J.-L. Thomassin, V. Bouchiat, M. Faucher, P. Febvre, A. Rousy and G. Lamura
    Abstract | PDF file (413 KB)


  • Low- $T_{\rm c}$ ramp-type Josephson junctions for SQUIDS     p. 133
    M. Podt, B.G.A. Rolink, J. Flokstra and H. Regalia
    Abstract | PDF file (305 KB)


  • Absolute high- $T_{\rm c}$ superconducting radiometer with electrical-substitution for X-rays measurements     p. 137
    I.A. Khrebtov, A.D. Tkachenko, K.V. Ivanov, A.D. Nikolenko and V.F. Pindyurin
    Abstract | PDF file (298 KB)


  • High-Tc superconducting microbolometer for terahertz applications     p. 141
    C. Ulysse, A. Gaugue, A. Adam, A.J. Kreisler, J.-C. Villégier and J.-L. Thomassin
    Abstract | PDF file (280 KB)


  • Tantalum superconducting tunnel junctions for photon counting detectors     p. 145
    C. Jorel, P. Feautrier, J.-C. Villégier and A. Benoit
    Abstract | PDF file (284 KB)


  • Interaction of super high frequency radiation with superconducting Bi(Pb)-Sr-Ca-Cu-O thin-film structures     p. 149
    V.D. Bondar, M.Ya. Vasyliv, V.M. Davydov, R.V. Lutsiv, O.D. Pustylnik and O.A. Khymenko
    Abstract | PDF file (232 KB)


  • RSFQ: The fastest digital technology     p. 155
    K.K. Likharev
    Abstract | PDF file (49.6 KB)


  • A 20-GHz FLUX-1 superconductor RSFQ microprocessor     p. 157
    M. Dorojevets
    Abstract | PDF file (358 KB)


  • Design and characterization of 225-370 GHz DSB and 247-360 GHz SSB full height waveguide SIS mixers     p. 161
    B. Lazareff, D. Billon-Pierron, A. Navarrini and I. Péron
    Abstract | PDF file (300 KB)


  • Non-linear two-frequency analysis of SIS mixers through harmonic balance     p. 165
    S. Withington, P. Kittara and G. Yassin
    Abstract | PDF file (256 KB)


  • Investigation of radiation hardness of SIS junctions for space borne radio astronomy     p. 169
    I. Péron, G. Faury, Y. Delorme, F. Dauplay, B. Lecomte, M. Salez and K.-F. Schuster
    Abstract | PDF file (231 KB)


  • Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon     p. 175
    G. Leroy, J. Gest, P. Tabourier, J.-C. Carru, P. Xavier, E. André1 and J. Chaussy
    Abstract | PDF file (210 KB)


  • Integrated niobium thin film air bridges as variable capacitors for GHz tuning circuits     p. 179
    M. Schicke and K.-F. Schuster
    Abstract | PDF file (279 KB)


  • Low frequency noise in YBaCuO superconducting thin films deposited on MgO     p. 183
    G. Leroy, J. Gest, P. Tabourier, J.-C. Carru, A.F. Dégardin and A.J. Kreisler
    Abstract | PDF file (211 KB)


  • Complete microwave characterization at 36 GHz of YBaCuO thin films deposited on MgO substrates. Influence of the substrate preparation     p. 187
    M. Achani, N. Bourzgui, J.-C. Carru, A.F. Dégardin, A. Gensbittel1 and A.J. Kreisler
    Abstract | PDF file (192 KB)


  • Superconducting cameras for optical astronomy     p. 193
    D.D.E. Martin, P.Verhoeve, J.H.J. de Bruijne, A.P. Reynolds, A. Van Dordrecht, J. Verveer, J. Page, N. Rando and A. Peacock
    Abstract | PDF file (631 KB)


  • A 4.2 K readout channel in a standard 0.7  $\mu$m CMOS process for a photoconductor array camera     p. 203
    Y. Creten, O. Charlier, P. Merken, J. Putzeys and C. Van Hoof
    Abstract | PDF file (158 KB)


  • Electronics for deep space cryogenic applications     p. 207
    R.L. Patterson, A. Hammoud, J.E. Dickman, S. Gerber, M. Elbuluk and E. Overton
    Abstract | PDF file (251 KB)


  • Demonstration of an 4.2 K analog switch matrix in a standard 0.7 $\mu$ CMOS process     p. 211
    Y. Creten, J. De Hert, O. Charliert, P. Merken, J. Putzeys and C. Van Hoof
    Abstract | PDF file (97.4 KB)







© EDP Sciences 2002