J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 117 - 120

J. Phys. IV France
12 (2002) Pr3-117
DOI: 10.1051/jp420020048

DC and 1/f noise characterization of cryogenically cooled pseudomorphic HEMT's

G. Ferrante1, 2, F. Principato2, A. Caddemi3, N. Donato3 and G. Tuccari4

1  Dipartimento di Fisica e Tecnologie Relative, Università di Palermo, Viale delle Scienze, 90128 Palermo, Italy
2  Istituto Nazionale per la Fisica della Materia, Unità di Palermo, Facoltà di Engegneria, Viale delle Scienze, 90128 Palermo, Italy
3  Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate and INFM, Università di Messina, Contrada Sperone, 31 S. Agata, 98166 Messina, Italy
4  Istituto di Radioastronomia IRA-CNR, Contrada Renna, 96017 Noto, Italy

Pseudomorphic (AIGaAs/InGaAs/GaAs) HEMT's have exhibited the best noise performance over the entire LF-to-microwave frequency range if compared to MESFET's and conventional GaAs HEMT's, due to either a reduced flicker noise, a lower G/R contribution and a smaller high-field diffusion noise. We have recently investigated the microwave (up to 18 GHz) noise properties of packaged pseudomorphic HEMT's from 290 K down to cryogenic temperature values. The current experimental work is aimed at extending such analysis to the LF noise range and at low temperatures. Cryogenic noise spectra (1 Hz to 100 KHz) and DC characteristics have therefore been recorded and the relevant observations on the device behavior are herewith reported.

© EDP Sciences 2002