J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-325 - Pr3-332
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-325-Pr3-332

DOI: 10.1051/jp4:2001341

Growth of Ru and RuO2 films by metal-organic chemical vapour deposition

F. Fröhlich1, D. Machajdik1, V. Cambel1, J. Fedor1, A. Pisch2 and J. Lindner3

1  Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 84239 Bratislava, Slovak Republic
2  Laboratoire de Thermodynamique et de Physico-Chimie Métallurgiques, UMR 5614 du CNRS, INPG/UJF, BP. 75, 38402 Saint-Martin-d'Hères, France
3  AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany

We have prepared RuO2 layers by metal organic chemical vapour deposition using liquid delivery source and by thermal evaporation of powder precursors. The films were prepared on silicon and r-plane cut sapphire substrates. We discuss thermodynamics of both types of MOCVD techniques. Liquid delivery source technique using diglyme solvent results in deposition of metallic Ru film with some traces of RuO2, while films prepared by thermal evaporation of powder precursors consist of pure RuO2 phase. Thermal evaporation MOCVD grown RuO2 films exhibit excellent electrical properties ; room temperature resistivity of 30 µΩ.cm and residual resistivity ratio between 8 and 30.

© EDP Sciences 2001