Le Journal de Physique IV

Vol. 11 No. PR3 (Août 2001)

Thirteenth European Conference on Chemical Vapor Deposition

• Thermodynamic, kinetic and mass transport calculations, as the basis for materials processing by CVD     p. Pr3-3
  C. Bernard
  Abstract | PDF file (920.4 KB)



• Insights into the MOCVD process of GaN using single-source precursors. Matrix isolation : A powerful technique     p. Pr3-17
  J. Müller, B. Witting, H. Sternkicker and S. Bendix
  Abstract | PDF file (290.3 KB)



• The growth kinetics study of CVD Cu on TiN barriers     p. Pr3-23
  W. Pan, D.R. Evans, R. Barrowcliff and S.T. Hsu
  Abstract | PDF file (937.0 KB)



• The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors     p. Pr3-31
  R.F. Hicks, Q. Fu, L. Li, S.B. Visbeck, Y. Sun, C.H. Li and D.C. Law
  Abstract | PDF file (1.767 MB)



• Thermodynamic and kinetic criteria to select hydrocarbon precursor     p. Pr3-39
  S. de Persis and F. Teyssandier
  Abstract | PDF file (1.170 MB)



• A study of morphology and texture of LPCVD germanium-silicon films     p. Pr3-47
  A. Kovalgin and J. Holleman
  Abstract | PDF file (2.388 MB)



• Chemical vapor deposition of silicon carbide at various temperatures and surface area/volume ratios     p. Pr3-55
  W.G. Zhang and K.J. Hüttinger
  Abstract | PDF file (647.9 KB)



• Density functional study on the adsorption of DMAH on hydrogen terminated Si(111) surfaces     p. Pr3-63
  T. Matsuwaki, T. Nakajima and K. Yamashita
  Abstract | PDF file (1.905 MB)



• (HFA)Cu . 1,5-COD as the prospective precursor for CVD-technologies : The electronic structure, thermodynamical properties and process of formation of thin copper films     p. Pr3-69
  T.I. Liskovskaya, L.G. Bulusheva, A.V. Okotrub, S.A. Krupoder, P.P. Semyannikov, I. P. Asanov, I.K. Igumenov, A.V. Manaev, V.F. Traven and A.G. Cherkov
  Abstract | PDF file (913.6 KB)



• Elementary steps and application of the CVD of SiC/BN double layers     p. Pr3-77
  S. Hemeltjen, J. Heinrich, G. Marx, D. Dietrich, K. Nestler, K. Weise and S. Stöckel
  Abstract | PDF file (919.6 KB)



• Thermodynamic and experimental study of low temperature ZrB₂ chemical vapor deposition     p. Pr3-85
  J.F. Pierson, T. Belmonte and H. Michel
  Abstract | PDF file (366.7 KB)



• MOCVD of lead-containing perovskites     p. Pr3-93
  A.A. Bosak, A.N. Botev, O.Yu. Gorbenko, I.E. Graboy, S.V. Samoilenkov, A.R. Kaul, C. Dubourdieu and J.-P. Sénateur
  Abstract | PDF file (338.0 KB)



• Kinetic modelling of gas-phase decomposition of propane : Correlation with pyrocarbon deposition     p. Pr3-101
  B. Descamps, G.L. Vignoles, O. Féron, J. Lavenac and F. Langlais
  Abstract | PDF file (477.5 KB)



• Transition and rare earth metal fluorides as thermal sources of atomic and molecular fluorine     p. Pr3-109
  J.V. Rau, N.S. Chilingarov, M.S. Leskiv, V.F. Sukhoverkhov, V. Rossi Albertini and L.N. Sidorov
  Abstract | PDF file (130.9 KB)



• Multiscale approach to material synthesis by gas phase deposition     p. Pr3-117
  M. Masi
  Abstract | PDF file (677.1 KB)



• Modelling of silica film growth by chemical vapour deposition : Influence of the interface properties     p. Pr3-129
  L. Vázquez, F. Ojeda, R. Cuerno, R. Salvarezza and J.M. Albella
  Abstract | PDF file (678.6 KB)



• Kinetics of LPCVD of gallium nitride and oxynitride films based on pyrolysis of a gallium chloride complex with ammonia GaCl₃NH₃     p. Pr3-141
  S.E. Alexandrov and V.A. Kriakin
  Abstract | PDF file (369.2 KB)



• Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, O₃, TMB, TMP_i : Determination of a chemical mechanism     p. Pr3-149
  J.-P. Nieto, B. Caussat, J.-P. Couderc, I. Orain and L. Jeannerot
  Abstract | PDF file (269.4 KB)



• Kinetics of LPCVD of aluminium nitride films based on pyrolysis of aluminium chloride complex     p. Pr3-155
  S.E. Alexandrov and V.A. Chistiakov
  Abstract | PDF file (318.6 KB)



• Two-dimensional simulation of a pulsed-power electronegative discharge     p. Pr3-163
  B. Ramamurthi and D.J. Economou
  Abstract | PDF file (402.9 KB)



• Heat and mass transfer during producing silicon layers by chloride LPCVD process     p. Pr3-171
  V.G. Minkina
  Abstract | PDF file (236.9 KB)



• Thermodynamic modelling of the chemical vapour deposition of boron nitride in the B-N-H-He-O system     p. Pr3-177
  A.N. Golubenko, M.L. Kosinova and F.A. Kuznetsov
  Abstract | PDF file (256.5 KB)



• Computational analysis of horizontal cold wall CVD reactors at low pressure : Application to tungsten deposition from pyrolysis of W(CO)₆     p. Pr3-183
  T.C. Xenidou, M.K. Koukou, A.G. Boudouvis and N.C. Markatos
  Abstract | PDF file (634.3 KB)



• Kinetics of the initial stages of film formation during low pressure chemical vapour deposition of polysilicon by pyrolysis of silane     p. Pr3-189
  L. Zambov, B. Caussat, R. Boubeker and J.-P. Couderc
  Abstract | PDF file (368.6 KB)



• Computational design and analysis of MOVPE reactors     p. Pr3-197
  R.P. Pawlowski, A.G. Salinger, L.A. Romero and J.N. Shadid
  Abstract | PDF file (1001 KB)



• A TCAD tool for the simulation of the CVD process based on cellular automata     p. Pr3-205
  G.Ch. Sirakoulis, I. Karafyllidis and A. Thanailakis
  Abstract | PDF file (1.560 MB)



• Effect of the precursors on the deposition of (Ba, Sr)TIO₃ films     p. Pr3-215
  J.-H. Lee, W.-Y. Yang, S.-W. Rhee and D. Kim
  Abstract | PDF file (730.5 KB)



• Halide CVD of dielectric and ferroelectric oxides     p. Pr3-223
  A. Harsta
  Abstract | PDF file (1.549 MB)



• Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures     p. Pr3-231
  V. Em. Vamvakas, R. Berjoan, S. Schamm, D. Davazoglou and C. Vahlas
  Abstract | PDF file (404.9 KB)



• Low pressure chemical vapor deposition of Cu_xS     p. Pr3-239
  B. Meester, L. Reijnen, F. de Lange, A. Goossens and J. Schoonman
  Abstract | PDF file (344.8 KB)



• Perovskite heterostructures grown by MOCVD     p. Pr3-247
  O.Yu. Gorbenko, I.E. Graboy, M.A. Novozhilov, A.R. Kaul, G. Wahl and V.L. Svetchnikov
  Abstract | PDF file (2.509 MB)



• Epitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4     p. Pr3-255
  Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota
  Abstract | PDF file (850.3 KB)



• Organic chemistry by CVD     p. Pr3-261
  L. He, M.L. Hitchman, S.H. Shamlian and S.E. Alexandrov
  Abstract | PDF file (333.5 KB)



• Molecular magnets and conductors on surfaces     p. Pr3-271
  H. Casellas, D. de Caro, L. Valade and L. Ariès
  Abstract | PDF file (590.3 KB)



• Modification of activated carbon fiber pore structure by coke deposition     p. Pr3-279
  X. Dabou, P. Samaras and G.P. Sakellaropoulos
  Abstract | PDF file (775.7 KB)



• Properties of thin AIN films prepared by PECVD and rapid thermal processes     p. Pr3-287
  G.D. Beshkov, S.S. Georgiev, K.G. Grigorov, H.S. Maciel, A. Djouadi and M. Marinov
  Abstract | PDF file (621.0 KB)



• CVD growth of silicon films at high rates     p. Pr3-293
  M. Hofstätter, B. Atakan and K. Kohse-Höinghaus
  Abstract | PDF file (1.257 MB)



• Nucleation and growth of silicon on ceramic substrates by RTCVD at atmospheric pressure     p. Pr3-301
  A. Slaoui and S. Bourdais
  Abstract | PDF file (1.329 MB)



• An extended interpretation of chemical vapor infiltration of carbon     p. Pr3-307
  Z.J. Hu, W.G. Zhang and K.J. Hüttinger
  Abstract | PDF file (240.2 KB)



• Structural and morphological changes in low temperature annealed LPCVD Si layers     p. Pr3-315
  B. Cobianu, M. Modreanu, M. Danila, R. Gavrila, M . Bercu and M. Gartner
  Abstract | PDF file (401.1 KB)



• Growth of Ru and RuO₂ films by metal-organic chemical vapour deposition     p. Pr3-325
  F. Fröhlich, D. Machajdik, V. Cambel, J. Fedor, A. Pisch and J. Lindner
  Abstract | PDF file (370.2 KB)



• Growth of magnetoresistant La_1-xMnO₃ films on r-plane cut sapphire     p. Pr3-333
  K. Fröhlich, M. Pripko, I. Vávra, K. Dénesová and D. Machajdík
  Abstract | PDF file (268.7 KB)



• Structural properties of [(La_0.7Sr_0.3MnO₃/SrTiO₃)]₁₅ superlattices prepared by pulsed injection-MOCVD     p. Pr3-341
  M. Rosina, C. Dubourdieu, F. Weiss, J.P. Sénateur and K. Fröhlich
  Abstract | PDF file (270.1 KB)



• Influence of hydrogen on chemical beam epitaxy of GaAs using triethylgallium and diethylarsine     p. Pr3-349
  F. Maury and E. Bedel-Pereira
  Abstract | PDF file (395.6 KB)



• Treatment of polyethylene terephthalate in a He glow discharge     p. Pr3-357
  D.D. Papakonstantinou, D. Mataras and Arefi-Khonsari
  Abstract | PDF file (247.5 KB)



• Photodegradative properties of TiO₂ films prepared by MOCVD     p. Pr3-363
  I. Justicia, J.A. Ayllón, A. Figueras, G.A. Battiston and R. Gerbasi
  Abstract | PDF file (322.2 KB)



• Advances in the use of MOCVD methods for the production of novel photonic bandgap materials     p. Pr3-371
  D.E. Whitehead, M.E. Pemble, H.M. Yates, A. Blanco, C. Lopez, H. Miguez and F.J. Meseguer
  Abstract | PDF file (278.3 KB)



• Tin oxide APCVD thin films grown by SnCl₄ oxidation on glass and Si substrates in a cold wall reactor     p. Pr3-377
  A. Koutsogianni and D. Tsamakis
  Abstract | PDF file (264.3 KB)



• Preparation and optical study of APCVD mixed metal oxide films     p. Pr3-385
  T. Ivanova, K.A. Gesheva, A. Szekeres, A. Maksimov and S. Zaitzev
  Abstract | PDF file (245.9 KB)



• Processing of (PyC/TiC)_n multilayered coatings by pulsed CVD and RCVD     p. Pr3-391
  O. Rapaud, H. Vincent, C. Vincent, S. Jacques and J. Bouix
  Abstract | PDF file (391.1 KB)



• Carbon nanotubes by CVD and applications     p. Pr3-401
  A. Cassell, L. Delzeit, C. Nguyen, R. Stevens, J. Han and M. Meyyappan
  Abstract | PDF file (1.823 MB)



• Synthesis and characterization of carbon nanotubes     p. Pr3-411
  J. B. Nagy and A. Fonseca
  Abstract | PDF file (1.471 MB)



• Gas-phase stability of c-BN clusters     p. Pr3-423
  K. Larsson
  Abstract | PDF file (364.9 KB)



• Silicon oxide nanolayers for soft X-ray optics produced by plasma enhanced CVD     p. Pr3-431
  F. Hamelmann, A. Aschentrup, J. Schmalhorst, U. Kleineberg, U. Heinzmann, K. Dittmar and P. Jutzi
  Abstract | PDF file (247.2 KB)



• Nanoscale cobalt oxides thin films obtained by CVD and sol-gel routes     p. Pr3-437
  L. Armelao, D. Barreca, S. Gross and E. Tondello
  Abstract | PDF file (817.2 KB)



• Chemical vapour deposition - a promising method for production of different kinds of carbon nanotubes     p. Pr3-445
  A. Leonhardt, M. Ritschel, K. Bartsch, A. Graff, C. Täschner and J. Fink
  Abstract | PDF file (1.830 MB)



• Nanophased ZrO2-CeO2 or TiO2-ZrO2-CeO2 films by CVD as catalysts for hydrocarbon complete combustion     p. Pr3-453
  D. Barreca, G.A. Battiston, U. Casellato, R. Gerbasi, E. Roncari, E. Tondello and P. Zanella
  Abstract | PDF file (1.331 MB)



• Formation of cubic SiC nanocrystals by laser-assisted CVD     p. Pr3-461
  Y. Kamlag, A. Goossens, I. Colbeck and J. Schoonman
  Abstract | PDF file (591.7 KB)



• Nanocrystalline ZnO from siloxy-substituted single-source precursors     p. Pr3-467
  K. Merz, R. Schoenen and M. Driess
  Abstract | PDF file (433.7 KB)



• Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors     p. Pr3-473
  H. Parala, A. Devi, W. Rogge, A. Birkner and R.A. Fischer
  Abstract | PDF file (1.105 MB)



• Synthesis of nanocomposite Pd balls and wires by chemical vapor infiltration     p. Pr3-481
  K.-B. Lee, C.-S. Choi, S.J. Oh, H.-C.Ri and J. Cheon
  Abstract | PDF file (282.3 KB)



• Composition, morphology and particle size control in nanocrystalline iron oxide films grown by single-source CVD     p. Pr3-487
  S. Mathur, M. Veith, V. Sivakov, H. Shen and H.-B. Gao
  Abstract | PDF file (527.6 KB)



• Advances in copper CVD for the semiconductor industry     p. Pr3-497
  J.A.T. Norman
  Abstract | PDF file (418.9 KB)



• General aspects of surface chemistry of metal β-diketonates     p. Pr3-505
  I.K. Igumenov, A.E. Turgambaeva and P.P. Semyannikov
  Abstract | PDF file (537.8 KB)



• Fundamental studies on the decomposition mechanism of Ti(OC₃H₇)₄ and TiO₂ film evolution on Si(100) and Pt(100) surfaces     p. Pr3-517
  S.-I. Cho, S.H. Moon and C.-H. Chung
  Abstract | PDF file (373.2 KB)



• Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursor     p. Pr3-525
  B. Atakan and Z.-J. Liu
  Abstract | PDF file (341.8 KB)



• Direct liquid injection MOCVD growth of TiO₂ films using the precursor Ti(mpd)(dmae)₂     p. Pr3-531
  A. Awaluddin, M.E. Pemble, A.C. Jones and P.A. Williams
  Abstract | PDF file (347.0 KB)



• Al₂O₃ growth optimisation using aluminium dimethylisopropoxide as precursor as a function of reaction conditions and reacting gases     p. Pr3-539
  D. Barreca, G.A. Battiston, G. Carta, R. Gerbasi, G. Rossetto, E. Tondello and P. Zanella
  Abstract | PDF file (379.6 KB)



• Synthesis of siloxy- and alkoxy-substituted ZnO-aggregates for CVS of ZnO     p. Pr3-547
  R. Schoenen, K. Merz, S. Rell and M. Driess
  Abstract<