J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-293 - Pr3-299
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-293-Pr3-299

DOI: 10.1051/jp4:2001337

CVD growth of silicon films at high rates

M. Hofstätter, B. Atakan and K. Kohse-Höinghaus

Physikalische Chemie I, Fakultät für Chemie, Universität Bielefeld, Universitätsstr. 25, 33615 Bielefeld, Germany

Silicon growth at high growth rates is e.g. interesting for the production of solar cells. The growth of silicon from silane was systematically studied both in experiments and by computational modelling. The influence of two different buffer gases and of iodine as additive were investigated. In a cold-wall CVD reactor, growth rates of up to 1 micron/h were achieved, similar to modelling predictions. The morphology and growth rate as a function of pressure, temperature, flow rate, buffer gas and additive were studied. The samples were analysed by optical microscopy, SEM and in part by XRD and XPS. The morphology as well as the growth rate can be varied in a wide parameter range.

© EDP Sciences 2001