Issue
J. Phys. IV France
Volume 12, Number 4, June 2002
Page(s) 155 - 160
DOI https://doi.org/10.1051/jp4:20020090


J. Phys. IV France
12 (2002) Pr4-155
DOI: 10.1051/jp4:20020090

Characterization of amorphous SIC:H thin films grown by RF plasma enhanced CVD on annealing temperature

M.G. Park1, W.S. Choi1, J.-H. Boo1, Y.T. Kim2, D.H. Yoon2 and B. Hong1

1  Center for Advanced Plasma Surface Technology, SungkyunKwan University, Suwon 440-746, Korea
2  School of Metallurgical and Materials Engineering, SungkyunKwan University, Suwon 440-746, Korea


Abstract
n this work, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiCa:H) films on annealing temperature ( Ta) and radio frquency (RF) power. The substrate temperature ( Ts was 250 °C, the RF power was varied from 30 W to 400 W, and the range of Ts, was from 400 °C to 600 °C. The a-SiC:H films were deposited by using PECVD (plasma enhanced chemical vapor deposition) system on Coming glass and p-type Si (100) wafer with a SiH 4+CH 4 gas tnudiue. The experimental results have shown that the optical band gap energy ( Eg) of the aSiC:H thin films changed little with the annealing temperature while E $_{\rm g}$ increased with the RF power. The Raman spectnrn of the thin films annealed at high temperatures showed that graphitization of carbon clusters and rnicrocrystalline silicon occurs. The current voltage characteristics have shown good electrical properties in relation to the annealed films.



© EDP Sciences 2002

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.

Initial download of the metrics may take a while.