J. Phys. IV France
Volume 12, Numéro 4, June 2002
Page(s) 155 - 160

J. Phys. IV France
12 (2002) Pr4-155
DOI: 10.1051/jp4:20020090

Characterization of amorphous SIC:H thin films grown by RF plasma enhanced CVD on annealing temperature

M.G. Park1, W.S. Choi1, J.-H. Boo1, Y.T. Kim2, D.H. Yoon2 and B. Hong1

1  Center for Advanced Plasma Surface Technology, SungkyunKwan University, Suwon 440-746, Korea
2  School of Metallurgical and Materials Engineering, SungkyunKwan University, Suwon 440-746, Korea

n this work, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiCa:H) films on annealing temperature ( Ta) and radio frquency (RF) power. The substrate temperature ( Ts was 250 °C, the RF power was varied from 30 W to 400 W, and the range of Ts, was from 400 °C to 600 °C. The a-SiC:H films were deposited by using PECVD (plasma enhanced chemical vapor deposition) system on Coming glass and p-type Si (100) wafer with a SiH 4+CH 4 gas tnudiue. The experimental results have shown that the optical band gap energy ( Eg) of the aSiC:H thin films changed little with the annealing temperature while E $_{\rm g}$ increased with the RF power. The Raman spectnrn of the thin films annealed at high temperatures showed that graphitization of carbon clusters and rnicrocrystalline silicon occurs. The current voltage characteristics have shown good electrical properties in relation to the annealed films.

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