J. Phys. IV France 12 (2002) Pr4-147
Conductive Cu-TiO2 thin films obtained via MOCVDF. Alvarez y Quintavalle1, G.A. Battiston1, U. Casellato1, D. Fregona2, R. Gerbasi1 and F. Loro1
1 Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati del CNR, Corso Stati Uniti 4, 35127 Padova, Italy
2 Dipartimento di Chimica Inorganica, Metallorganica ed Analitica, Università di Padova, via Marzolo 1, 35131 Padova, Italy
Growths of nanophased Cu, CuO, Cu-TiO2 and Cu 2O-TiO 2 thin films were performed by using titanium tetraisopropoxide Ti(OiPr) 4, and copper(II)acetylacetonatehydrate Cu(acac) 2.H 2O in the temperature range 275- 370 °C. The composite Cu-TiO 2 with very low percent of titanium dioxide (TiO 2<5%) can be an alternative procedure to obtain well adherent, smooth and well connected Cu films. Cu 2O-TiO 2 were obtained by annealing of Cu-TiO 2 thin films. Cu 2O in a TiO 2 matrix remains unaltered after repeated thermal treatments when the Cu:Ti metal ratio is equal or less than 15:1. The films exhibited semiconductor characteristics with a moderate transparency, 40-60% in the visible region.
© EDP Sciences 2002