Issue
J. Phys. IV France
Volume 12, Number 4, June 2002
Page(s) 147 - 153
DOI https://doi.org/10.1051/jp4:20020089


J. Phys. IV France
12 (2002) Pr4-147
DOI: 10.1051/jp4:20020089

Conductive Cu-TiO2 thin films obtained via MOCVD

F. Alvarez y Quintavalle1, G.A. Battiston1, U. Casellato1, D. Fregona2, R. Gerbasi1 and F. Loro1

1  Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati del CNR, Corso Stati Uniti 4, 35127 Padova, Italy
2  Dipartimento di Chimica Inorganica, Metallorganica ed Analitica, Università di Padova, via Marzolo 1, 35131 Padova, Italy


Abstract
Growths of nanophased Cu, CuO, Cu-TiO2 and Cu 2O-TiO 2 thin films were performed by using titanium tetraisopropoxide Ti(OiPr) 4, and copper(II)acetylacetonatehydrate Cu(acac) 2.H 2O in the temperature range 275- 370 °C. The composite Cu-TiO 2 with very low percent of titanium dioxide (TiO 2<5%) can be an alternative procedure to obtain well adherent, smooth and well connected Cu films. Cu 2O-TiO 2 were obtained by annealing of Cu-TiO 2 thin films. Cu 2O in a TiO 2 matrix remains unaltered after repeated thermal treatments when the Cu:Ti metal ratio is equal or less than 15:1. The films exhibited semiconductor characteristics with a moderate transparency, 40-60% in the visible region.



© EDP Sciences 2002

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