Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-21 - C6-21
DOI http://dx.doi.org/10.1051/jp4:1991603
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-21-C6-21

DOI: 10.1051/jp4:1991603

ANALYSIS OF THE RECOMBINATION VELOCITY AND OF THE EBIC AND CATHODOLUMINESCENCE CONTRAST AT A DISLOCATION

R.J. TARENTO1 and Y. MARFAING2

1  Laboratoire de Physique des Matériaux, CNRS, 1 Place A. Briand, F-92195 Meudon Cedex, France
2  Laboratoire de Physique des Solides de Bellevue, CNRS, 1 Place A. Briand, F-92195 Meudon Cedex, France

Without abstract




© EDP Sciences 1991
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