J. Phys. IV France
Volume 132, March 2006
Page(s) 355 - 357
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 355-357

DOI: 10.1051/jp4:2006132068

Microwave characteristics of hetero-junction impatt diodes based on SiC

V.V. Buniatyan1, V.M. Aroutiounian2, P.G. Soukiassian3, K. Zekentes4 and Vaz. V. Buniatyan1

1  State Engineering University of Armenia, 105 Teryan Str., 375009 Yerevan, Armenia
2  Yerevan State University, Al. Manoukian Str. 1, 375049 Yerevan, Armenia
3  Université de Paris-Sud/Orsay, Commissariat à l'Énergie Atomique, Saclay, DSM-DRECAM-SPCSI-SIMA, Bât. 462, 91191 Gif-sur-Yvette Cedex, France
4  MRG, Institute of Electronic Structure & Lasers, FORTH, 71110 Heraklion Greece

Microwave impedance characteristics of the double velocity IMPATT diode structure made of Si/SiC heterostructures are examined.

© EDP Sciences 2006