J. Phys. IV France
Volume 132, March 2006
Page(s) 345 - 349
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 345-349

DOI: 10.1051/jp4:2006132066

Using [Naphthyl-substituted benzidine derivative] (NPB): Tris-(8-hydroxyquinoline)-aluminum(III) (Alq3) mixed Layer to improve the efficiency of organic light emitting diodes

Ching-Huei Tseng1, Uerng-Yih Ueng1 and Meiso Yokoyama2

1  Department of Electrical Engineering, National Sun Yat-Sen University Kaohsiung, Taiwan, R.O.C
2  Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan, R.O.C

The organic light emitting diodes (OLED) with a mixed layer has been prepared. The mixed layer is constructed by mixing tris-(8-hydroxyquinoline)-aluminum(III) (Alq3) with [Naphthyl-substituted benzidine derivative] (NPB), and inserted it between the hole transporting layer of NPB and the emitting layer of Alq3. The structure of the mixed layer OLED is ITO/ [ $4^{\prime}$, $4^{\prime\prime}$-tris[3-methylphenyl(phenyl) amino] triphenylamine (MTDATA)(15 nm)/NPB(60-X nm)/NPB:Alq3(Y weight-%)(X nm)/Alq3(60 nm)/LiF/Al. In this study, the best concentration of Alq3 in NPB is 30 wt% with the total thickness of 30 nm. The maximum luminescence efficiency is 9.0 cd/A.

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