J. Phys. IV France
Volume 132, March 2006
Page(s) 325 - 328
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 325-328

DOI: 10.1051/jp4:2006132062

Reflectance calculation of a diamond-like carbon/porous Si thin films in silicon-based photovoltaic cells

Kh.S. Martirosyan1, V.M. Aroutiounian1 and P. Soukiassian2

1  Department of Physics of Semiconductor and Microelectronics, Yerevan State University, 1 Alex Manouchian St., Yerevan 375025, Republic of Armenia
2  Commissariat à l'Énergie Atomique, Laboratoire SIMA associé à l'Université de Paris-Sud, DSM-DRECAM-SPCSI, Saclay, Bâtiment 462, 91191 Gif-sur-Yvette Cedex, France

The reflectance of a diamond-like carbon antireflection thin-film on a porous silicon is calculated using the optical matrix approach method. The result is compared to the reflectance spectrum of other antireflection films. This indicates a much lower reflectance combined with a larger energy range covering the infrared to the ultraviolet regions of the solar spectrum. It shows the interest of interfacing with the solar cell surface thin films of materials having appropriate refractive index that could reduce significantly the reflected part of the incoming solar radiation.

© EDP Sciences 2006