Numéro |
J. Phys. IV France
Volume 132, March 2006
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Page(s) | 325 - 328 | |
DOI | https://doi.org/10.1051/jp4:2006132062 | |
Publié en ligne | 11 mars 2006 |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 325-328
DOI: 10.1051/jp4:2006132062
1 Department of Physics of Semiconductor and Microelectronics, Yerevan State University, 1 Alex Manouchian St., Yerevan 375025, Republic of Armenia
2 Commissariat à l'Énergie Atomique, Laboratoire SIMA associé à l'Université de Paris-Sud, DSM-DRECAM-SPCSI, Saclay, Bâtiment 462, 91191 Gif-sur-Yvette Cedex, France
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 325-328
DOI: 10.1051/jp4:2006132062
Reflectance calculation of a diamond-like carbon/porous Si thin films in silicon-based photovoltaic cells
Kh.S. Martirosyan1, V.M. Aroutiounian1 and P. Soukiassian21 Department of Physics of Semiconductor and Microelectronics, Yerevan State University, 1 Alex Manouchian St., Yerevan 375025, Republic of Armenia
2 Commissariat à l'Énergie Atomique, Laboratoire SIMA associé à l'Université de Paris-Sud, DSM-DRECAM-SPCSI, Saclay, Bâtiment 462, 91191 Gif-sur-Yvette Cedex, France
Abstract
The reflectance of a diamond-like carbon
antireflection thin-film on a porous silicon is calculated using the optical
matrix approach method. The result is compared to the reflectance spectrum
of other antireflection films. This indicates a much lower reflectance
combined with a larger energy range covering the infrared to the ultraviolet
regions of the solar spectrum. It shows the interest of interfacing with the
solar cell surface thin films of materials having appropriate refractive
index that could reduce significantly the reflected part of the incoming
solar radiation.
© EDP Sciences 2006