J. Phys. IV France
Volume 132, March 2006
|Page(s)||325 - 328|
|Published online||11 March 2006|
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 325-328
Reflectance calculation of a diamond-like carbon/porous Si thin films in silicon-based photovoltaic cellsKh.S. Martirosyan1, V.M. Aroutiounian1 and P. Soukiassian2
1 Department of Physics of Semiconductor and Microelectronics, Yerevan State University, 1 Alex Manouchian St., Yerevan 375025, Republic of Armenia
2 Commissariat à l'Énergie Atomique, Laboratoire SIMA associé à l'Université de Paris-Sud, DSM-DRECAM-SPCSI, Saclay, Bâtiment 462, 91191 Gif-sur-Yvette Cedex, France
The reflectance of a diamond-like carbon antireflection thin-film on a porous silicon is calculated using the optical matrix approach method. The result is compared to the reflectance spectrum of other antireflection films. This indicates a much lower reflectance combined with a larger energy range covering the infrared to the ultraviolet regions of the solar spectrum. It shows the interest of interfacing with the solar cell surface thin films of materials having appropriate refractive index that could reduce significantly the reflected part of the incoming solar radiation.
© EDP Sciences 2006