J. Phys. IV France
Volume 132, March 2006
Page(s) 311 - 314
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 311-314

DOI: 10.1051/jp4:2006132059

Ordered silicon structures on silver (100) at 230°C

C. Leandri1, B. Aufray1, 0, G. Le Lay1, C. Girardeaux2, C. Ottaviani3 and A. Cricenti3

1  CRMCN-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 09, France
2  L2MP, Faculté de Saint Jérôme, Case 142, 13397 Marseille Cedex 20, France
3  Instituto di Struttura della Materia, CNR, Via Fosso del Cavaliere, 00133 Rome, Italy

The growth of silicon at 230$^{\circ}$C on the silver (100) surface has been studied by Auger Electron Spectroscopy (AES), Low Energy Electron Diffraction (LEED) and Photo Electron Spectroscopy (PES). At this temperature, the growth starts with the formation of one complete monolayer showing a p($3\times 3$) superstructure. Beyond, the p($3\times 3$) evolves towards a "complex" superstructure (which has not been indexed) corresponding to the formation of silicon islands. Surprisingly, the PES results reveal that Si presents a strong metallic character at least up to 1.7 ML.

© EDP Sciences 2006