| Issue |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 311 - 314 | |
| DOI | https://doi.org/10.1051/jp4:2006132059 | |
| Published online | 11 March 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 311-314
DOI: 10.1051/jp4:2006132059
1 CRMCN-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 09, France
2 L2MP, Faculté de Saint Jérôme, Case 142, 13397 Marseille Cedex 20, France
3 Instituto di Struttura della Materia, CNR, Via Fosso del Cavaliere, 00133 Rome, Italy
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 311-314
DOI: 10.1051/jp4:2006132059
Ordered silicon structures on silver (100) at 230°C
C. Leandri1, B. Aufray1, 0, G. Le Lay1, C. Girardeaux2, C. Ottaviani3 and A. Cricenti31 CRMCN-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 09, France
2 L2MP, Faculté de Saint Jérôme, Case 142, 13397 Marseille Cedex 20, France
3 Instituto di Struttura della Materia, CNR, Via Fosso del Cavaliere, 00133 Rome, Italy
Abstract
The growth of silicon at 230
C on the silver (100) surface
has been studied by Auger Electron Spectroscopy (AES), Low Energy
Electron Diffraction (LEED) and Photo Electron Spectroscopy (PES).
At this temperature, the growth starts with the formation of one
complete monolayer showing a p(
) superstructure. Beyond,
the p() evolves towards a "complex" superstructure
(which has not been indexed) corresponding to the formation of
silicon islands. Surprisingly, the PES results reveal that Si
presents a strong metallic character at least up to 1.7 ML.
© EDP Sciences 2006