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Numéro
J. Phys. IV France
Volume 132, March 2006
Page(s) 301 - 305
DOI https://doi.org/10.1051/jp4:2006132057
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 301-305
DOI: 10.1051/jp4:2006132057

Growth of long range ordered pentacene/benzenethiol/Cu(100) heterostructure

A. Kanjilal1, F. Bussolotti1, 2, F. Crispoldi1, 2, M. Beccari3, V. Di Castro3, M. Grazia Betti4, 5 and C. Mariani1, 4

1  INFM-CNR Center on nanoStructures and bioSystems at Surfaces (S3), Via G. Campi 231/A, 41100 Modena, Italy
2  Dipartimento di Fisica, Università di Modena e Reggio Emilia, Via G. Campi, 213/A, 41100 Modena, Italy
3  Dipartimento di Chimica, Istituto Nazionale per la Fisica della Materia, Università di Roma "La Sapienza", Piazzale Aldo Moro 2, 00185 Roma, Italy
4  Dipartimento di Fisica, Istituto Nazionale per la Fisica della Materia, Università di Roma "La Sapienza", Piazzale Aldo Moro 2, 00185 Roma, Italy
5  INFM-CNR CRS-SOFT, Piazzale Aldo Moro 2, 00185 Roma, Italy


Abstract
We present a method of producing a long-range ordered pentacene ultra-thin film on a benzenethiol organic buffer layer at saturation coverage, deposited on a cleaned, single crystalline Cu(100) surface, by means of ultra-high-vacuum organic molecular beam epitaxy. The growth morphology is investigated using in-situ low-energy electron-diffraction (LEED) and high-resolution UV photoelectron spectroscopy (HR-UPS). The change in surface symmetry from c(4$\times $4) at low coverage to c($2\times 6$)/c($2\times 2$) at saturation coverage of benzenethiol has been examined by LEED. The corresponding valence band modifications have been found by HR-UPS. Pentacene layers up to a thickness of 0.6 nm possess exactly the same symmetry of the beneath organic buffer layer at saturation coverage, but with more intense and sharper spots as observed in the LEED patterns.



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