J. Phys. IV France
Volume 132, March 2006
|Page(s)||285 - 289|
|Publié en ligne||11 mars 2006|
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 285-289
Formation of epitaxial strontium oxide and silicate on silicon (001)G. Delhaye1, M. El Kazzi1, S. Gaillard1, 2, M. Gendry1 and G. Hollinger1
1 LEOM (UMR CNRS 5512), École Centrale de Lyon, 69134 Ecully Cedex, France
2 ST Microelectronics, 38926 Crolles Cedex, France
Molecular Beam Epitaxy was used to grow thin epitaxial SrO layers on Si(001). Such thin layers might act as a good template for the integration of epitaxial functional oxides with Si. Conditions for achieving well controlled interfacial properties were investigated as a function of growth temperature. Our results have shown that the growth of an epitaxial SrO film of good crystalline quality and the formation of a sharp interface were possible at low growth temperature. The behavior was quite different for a growth at high temperature where the formation of a silicate was observed.
© EDP Sciences 2006