| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 285 - 289 | |
| DOI | https://doi.org/10.1051/jp4:2006132054 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 285-289
DOI: 10.1051/jp4:2006132054
1 LEOM (UMR CNRS 5512), École Centrale de Lyon, 69134 Ecully Cedex, France
2 ST Microelectronics, 38926 Crolles Cedex, France
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 285-289
DOI: 10.1051/jp4:2006132054
Formation of epitaxial strontium oxide and silicate on silicon (001)
G. Delhaye1, M. El Kazzi1, S. Gaillard1, 2, M. Gendry1 and G. Hollinger11 LEOM (UMR CNRS 5512), École Centrale de Lyon, 69134 Ecully Cedex, France
2 ST Microelectronics, 38926 Crolles Cedex, France
Abstract
Molecular Beam Epitaxy was used to grow thin epitaxial
SrO layers on Si(001). Such thin layers might act as a good template for the
integration of epitaxial functional oxides with Si. Conditions for achieving
well controlled interfacial properties were investigated as a function of
growth temperature. Our results have shown that the growth of an epitaxial
SrO film of good crystalline quality and the formation of a sharp interface
were possible at low growth temperature. The behavior was quite different
for a growth at high temperature where the formation of a silicate was
observed.
© EDP Sciences 2006