| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 269 - 272 | |
| DOI | https://doi.org/10.1051/jp4:2006132051 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 269-272
DOI: 10.1051/jp4:2006132051
1 CRMCN-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 09, France
2 Riber S.A, 133 Bd. National, 92503 Reuil Malmaison Cedex, France
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 269-272
DOI: 10.1051/jp4:2006132051
Growth of aluminum oxide thin films on Cobalt: An AES and AFM study
H. Oughaddou1, S. Vizzini1, B. Aufray1, B. Ealet1, J.P. Bibérian1, L. Ravel1, 2, J.-M. Gay1 and F.A. d'Avitaya11 CRMCN-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 09, France
2 Riber S.A, 133 Bd. National, 92503 Reuil Malmaison Cedex, France
Abstract
Auger Electron Spectroscopy (AES) and Atomic-Force-Microscopy (AFM)
were used to study the formation and the surface roughness of a very
thin aluminum oxide film deposited on Co substrate. The results show
that the superficial oxide (AlOx) film on the surface of cobalt
obtained after oxidation at room temperature (RT) of one aluminum
monolayer (ML), is not stoichiometric alumina with an atomic
structure similar to known phases. It shows a composition profile
close to 
/Co/Co/Al/O. This superficial oxide is very
stable: there is no dissolution process of the film at least up to
500°C. The superficial oxide formation does not change the
initial surface roughness of the cobalt.
© EDP Sciences 2006