J. Phys. IV France
Volume 132, March 2006
Page(s) 249 - 253
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 249-253

DOI: 10.1051/jp4:2006132047

Precisely controlled anodic etching for processing of GaAs-based quantum nanostructures and devices

N. Shiozaki, T. Sato, M. Akazawa and H. Hasegawa

Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Sapporo 060-8628, Japan

For controlled low-damage etching of AlGaAs/GaAs nanostructures, fundamental properties of an etching process consisting of anodic oxidation and subsequent oxide dissolution are investigated both theoretically and experimentally. Anodic oxides formed on GaAs (001) and (111)B surfaces have the same composition and the same anodization parameters according to XPS, SEM and AFM measurements. The same applies to those formed on Al0.3Ga0.7As (001) and (111)B surfaces. The etching depth can be precisely controlled in nanometer scale by the anodization voltage. Selective etching was realized, using the lithography patterns. The surface morphology is much better than that in the standard wet chemical etching.

© EDP Sciences 2006