10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 95-99
DOI: 10.1051/jp4:2006132019
X-ray photoelectron spectroscopy study of silicon interlayer based surface passivation for AlGaAs/GaAs quantum structures on (111) B surfaces
M. Akazawa, N. Shiozaki and H. HasegawaResearch Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Sapporo 060-8628, Japan
Abstract
Applicability of the Si interface control layer (Si ICL)-based
surface passivation to GaAs and AlGaAs (111)B surfaces was
investigated. An in-situ X-ray photoelectron spectroscopy
(XPS) study confirmed formation of the intended passivation
structure. MBE grown GaAs and AlGaAs (111)B surfaces showed strong
Fermi level pinning. After Si ICL growth, large shifts of the
surface Fermi level position were observed. Photoluminescence (PL)
measurements were also used to examine the surfaces of AlGaAs/GaAs
quantum well and quantum wire structures grown on the GaAs (111)B
substrates. PL intensity reduction caused by surface states was
recovered remarkably by the Si ICL-based passivation.
© EDP Sciences 2006