J. Phys. IV France
Volume 132, March 2006
Page(s) 211 - 214
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 211-214

DOI: 10.1051/jp4:2006132040

Raman characterization of the In0.14Ga0.86As0.13Sb0.87 highly doped with Te grown on GaSb by liquid phase epitaxy

J. Díaz-Reyes1, E. López-Cruz2, J.G. Mendoza-Álvarez3 and S. Jiménez-Sandoval4

1  CIBA-IPN, Ex-Hacienda de San Juan Molino, Tepetitla, Tlaxcala, México 90700, México
2  Instituto de Física "Luis Rivera Terrazas", BUAP, Apdo. Postal J-48, Puebla, Pue, México
3  Depto. de Física, CINVESTAV-IPN, Apdo. Postal 14-740, México, D. F. 07000, México
4  CINVESTAV-IPN, Unidad Querétaro, Apdo. Postal 1-798, Querétaro, Qro. 76001, México

Using the liquid phase epitaxy technique under supercooling conditions we have grown In0.14Ga0.86As0.13Sb0.87 layers doped with tellurium lattice-matched to (100) n-GaSb substrates. Layers doped with tellurium were accomplished by incorporation of Sb2Te3 pellets into the growth melt in different concentrations, in the range of $6.48\times 10^{-6}$ to $4.31 \times
10^{-4}$ molar fraction. Using Raman scattering we characterized the structural quality. The Raman spectra show two main peaks located about 150 and 265 cm-1, which were deconvoluted by four Lorentzians. In order to assign the peaks use is made of the random-element isodisplacement (REI) model. Comparison of the experimental results with the values obtained by REI model allows us to confirm that the bands correspond to the LO-like and TO-like of the binary compounds, GaAs and (GaSb+InAs).

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