10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 211-214
DOI: 10.1051/jp4:2006132040

Raman characterization of the In_0.14Ga_0.86As_0.13Sb_0.87 highly doped with Te grown on GaSb by liquid phase epitaxy

J. Díaz-Reyes¹, E. López-Cruz², J.G. Mendoza-Álvarez³ and S. Jiménez-Sandoval<sup>4

1</sup>  CIBA-IPN, Ex-Hacienda de San Juan Molino, Tepetitla, Tlaxcala, México 90700, México
²  Instituto de Física "Luis Rivera Terrazas", BUAP, Apdo. Postal J-48, Puebla, Pue, México
³  Depto. de Física, CINVESTAV-IPN, Apdo. Postal 14-740, México, D. F. 07000, México
⁴  CINVESTAV-IPN, Unidad Querétaro, Apdo. Postal 1-798, Querétaro, Qro. 76001, México

Abstract
Using the liquid phase epitaxy technique under supercooling conditions we have grown In_0.14Ga_0.86As_0.13Sb_0.87 layers doped with tellurium lattice-matched to (100) n-GaSb substrates. Layers doped with tellurium were accomplished by incorporation of Sb₂Te₃ pellets into the growth melt in different concentrations, in the range of to molar fraction. Using Raman scattering we characterized the structural quality. The Raman spectra show two main peaks located about 150 and 265 cm^-1, which were deconvoluted by four Lorentzians. In order to assign the peaks use is made of the random-element isodisplacement (REI) model. Comparison of the experimental results with the values obtained by REI model allows us to confirm that the bands correspond to the LO-like and TO-like of the binary compounds, GaAs and (GaSb+InAs).

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