Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
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Page(s) | 205 - 209 | |
DOI | https://doi.org/10.1051/jp4:2006132039 | |
Publié en ligne | 11 mars 2006 |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 205-209
DOI: 10.1051/jp4:2006132039
1 IMEM-CNR Parco Area delle Scienze 37/A, 43010 Fontanini, Parma, Italy
2 Instituto de Ciencias, BUAP, Apdo postal 207, 7200, Puebla, Pue., Mexico
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 205-209
DOI: 10.1051/jp4:2006132039
Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems
C. Pelosi1, M. Bosi1, G. Attolini1 and T. Prutskij21 IMEM-CNR Parco Area delle Scienze 37/A, 43010 Fontanini, Parma, Italy
2 Instituto de Ciencias, BUAP, Apdo postal 207, 7200, Puebla, Pue., Mexico
Abstract
The issue regarding the interfaces between arsenide and phosphide in
III-V semiconductor is particularly relevant for Vapour Phase
Epitaxy (VPE) and Metallo-Organic Vapour Phase Epitaxy (MOVPE)
techniques; an irreproducibility in preparing abrupt interfaces
between arsenide and phosphide has been evidenced by several authors
and is often imputed to the volatility of arsenic and phosphorus
species: Many different growth procedures have been suggested in
order to obtain sharp transition between the two different
materials.
© EDP Sciences 2006