J. Phys. IV France
Volume 132, March 2006
Page(s) 205 - 209
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 205-209

DOI: 10.1051/jp4:2006132039

Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems

C. Pelosi1, M. Bosi1, G. Attolini1 and T. Prutskij2

1  IMEM-CNR Parco Area delle Scienze 37/A, 43010 Fontanini, Parma, Italy
2  Instituto de Ciencias, BUAP, Apdo postal 207, 7200, Puebla, Pue., Mexico

The issue regarding the interfaces between arsenide and phosphide in III-V semiconductor is particularly relevant for Vapour Phase Epitaxy (VPE) and Metallo-Organic Vapour Phase Epitaxy (MOVPE) techniques; an irreproducibility in preparing abrupt interfaces between arsenide and phosphide has been evidenced by several authors and is often imputed to the volatility of arsenic and phosphorus species: Many different growth procedures have been suggested in order to obtain sharp transition between the two different materials.

A novel approach to this problem is addressed in this work, in which the substrate/film interface is modelled using thermodynamical calculations after the "regular solution". InGaP samples were grown on GaAs substrate by MOVPE technique and characterised by photoluminenescence (PL) and Transmission Electron Microscopy (TEM) in order to support the theoretical model.

© EDP Sciences 2006