| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 195 - 198 | |
| DOI | https://doi.org/10.1051/jp4:2006132037 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 195-198
DOI: 10.1051/jp4:2006132037
Department of Chemistry and Biomedical Engineering, Laboratory for Surface Modification, 136 Frelinghuysen Road, Piscataway, NJ 08854-8019, USA
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 195-198
DOI: 10.1051/jp4:2006132037
Alkylation of Silicon(111) surfaces
S. Rivillon and Y.J. ChabalDepartment of Chemistry and Biomedical Engineering, Laboratory for Surface Modification, 136 Frelinghuysen Road, Piscataway, NJ 08854-8019, USA
Abstract
Methylation of chlorine-terminated silicon (111) (Si-Cl) is
investigated by Infra Red Absorption Spectroscopy (IRAS). Starting
from an atomically flat H-terminated Si(111), the surface is first
chlorinated by a gas phase process, then methylated using a Grignard
reagent. Methyl groups completely replace Cl, and are oriented
normal to the surface. The surface remains atomically flat with no
evidence of etching.
© EDP Sciences 2006