J. Phys. IV France
Volume 132, March 2006
|Page(s)||117 - 120|
|Publié en ligne||11 mars 2006|
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 117-120
In situ formation of a new Al-Pd-Mn-Si quasicrystalline phase on the pentagonal surface of the Al-Pd-Mn quasicrystalJ.-N. Longchamp, M. Erbudak and Y. Weisskopf
Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich, Switzerland
Growth of thin Si films deposited on the 5-fold symmetry surface of the icosahedral Al-Pd-Mn quasicrystal is monitored by low-energy electron diffraction, secondary-electron imaging, and Auger electron spectroscopy. We observe that below a sample temperature of 370 K, Si grows in an amorphous structure. Above 370 K, a new Al-Pd-Mn-Si quasicrystalline phase, which exhibits the same icosahedral symmetry as the substrate, is formed at the surface by substitutionally replacing Al by absorbed Si.
© EDP Sciences 2006